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NTMFS4846N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
10.7
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 11.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
18.9
34.2
7.1
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 30 A
T J = 25 ° C
T J = 125 ° C
0.8
0.66
1.0
V
Reverse Recovery Time
t RR
21.6
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 30 A
11.4
10.2
8.5
ns
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.65
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.005
1.84
Gate Resistance
R G
0.5
1.4
2.2
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
200
180
160
140
120
10 V
5.0 V
4.5 V
V GS = 4.2 V
T J = 25 ° C
4.0 V
3.8 V
3.6 V
160
140
120
100
V DS ≥ 10 V
100
3.4 V
80
80
60
40
20
0
0
1
2
3
4
5
3.2 V
3.0 V
2.8 V
2.6 V
6
60
40
20
0
0
T J = 125 ° C
T J = 25 ° C
1 2
T J = ? 55 ° C
3 4
5
6
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
http://onsemi.com
3
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
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